Infineon OptiMOS 3 Type N-Channel MOSFET, 96 A, 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1

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Subtotal (1 pack of 2 units)*

Kr.177 89 

(exc. VAT)

Kr.222 362 

(inc. VAT)

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  • Plus 1 172 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
2 - 8Kr. 88,945Kr. 177,89
10 - 18Kr. 76,535Kr. 153,07
20 - 48Kr. 71,155Kr. 142,31
50 - 98Kr. 66,695Kr. 133,39
100 +Kr. 61,375Kr. 122,75

*price indicative

Packaging Options:
RS Stock No.:
214-4424
Mfr. Part No.:
IPT111N20NFDATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

96A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOF

Series

OptiMOS 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.58 mm

Height

2.4mm

Standards/Approvals

No

Length

10.1mm

Automotive Standard

No

This Infineon OptiMOS 3 MOSFET is perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.

It is RoHS compliant

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