Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1

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Subtotal (1 pack of 15 units)*

Kr.187 47 

(exc. VAT)

Kr.234 33 

(inc. VAT)

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Per Pack*
15 - 60Kr. 12,498Kr. 187,47
75 - 135Kr. 11,875Kr. 178,13
150 - 360Kr. 11,371Kr. 170,57
375 - 735Kr. 10,883Kr. 163,25
750 +Kr. 10,128Kr. 151,92

*price indicative

Packaging Options:
RS Stock No.:
214-8967
Mfr. Part No.:
BSB104N08NP3GXUSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

MG-WDSON

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

10.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.35 mm

Length

5.05mm

Height

0.7mm

Automotive Standard

No

The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.

Low parasitic inductance

Optimized technology for DC/DC converters

Dual sided cooling

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