Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.53 055 00 

(exc. VAT)

Kr.66 320 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 10,611Kr. 53 055,00

*price indicative

RS Stock No.:
214-8969
Mfr. Part No.:
BSC010N04LSIATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

275A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.05mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.7V

Maximum Power Dissipation Pd

139W

Typical Gate Charge Qg @ Vgs

87nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.

Monolithic integrated Schottky-like diode

Optimized for synchronous rectification

100% avalanche tested

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