Infineon OptiMOS 5 N-Channel MOSFET, 176 A, 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- RS Stock No.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Brand:
- Infineon
Get a bulk buy discount
Add 50 more to save Kr. 50,90
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 201,80
(exc. VAT)
Kr. 252,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 40 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | Kr. 20,18 | Kr. 201,80 | - |
| 50 - 90 | Kr. 19,162 | Kr. 191,62 | Kr. 50,90 |
| 100 - 240 | Kr. 18,373 | Kr. 183,73 | Kr. 180,70 |
| 250 - 490 | Kr. 17,549 | Kr. 175,49 | Kr. 657,75 |
| 500 + | Kr. 16,348 | Kr. 163,48 | Kr. 1 916,00 |
*price indicative
- RS Stock No.:
- 214-8984
- Mfr. Part No.:
- BSZ014NE2LS5IFATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TSDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 600mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TSDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 600mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. With the OptiMOS-5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Monolithic integrated Schottky like diode
100% avalanche tested
Related links
- Infineon OptiMOS 5 N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON BSZ014NE2LS5IFATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 30 V N, 8-Pin TSDSON
- Infineon OptiMOS 5 N-Channel MOSFET 30 V N, 8-Pin TSDSON BSZ0589NSATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO BSC009NE2LS5ATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5IATMA1
- Infineon OptiMOS 5 N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO
- Infineon OptiMOS 5 N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TDSON