Infineon OptiMOS P3 Type P-Channel MOSFET, 39.6 A, 30 V Enhancement, 8-Pin TSDSON

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Subtotal (1 reel of 5000 units)*

Kr.12 010 00 

(exc. VAT)

Kr.15 010 00 

(inc. VAT)

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5000 +Kr. 2,402Kr. 12 010,00

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RS Stock No.:
214-8989
Mfr. Part No.:
BSZ180P03NS3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

39.6A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS P3

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

20nC

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Height

1.1mm

Length

5.49mm

Standards/Approvals

No

Width

6.35 mm

Automotive Standard

No

The Infineon range of OptiMOS single P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, battery management and load switching.

It has 150 °C operating temperature

Qualified according to JEDEC for target applications

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