Infineon OptiMOS Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin TO-252 IPD14N06S280ATMA2
- RS Stock No.:
- 214-9031
- Mfr. Part No.:
- IPD14N06S280ATMA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.108 64
(exc. VAT)
Kr.135 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 640 unit(s) shipping from 19. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 5,432 | Kr. 108,64 |
| 200 - 480 | Kr. 4,239 | Kr. 84,78 |
| 500 - 980 | Kr. 3,964 | Kr. 79,28 |
| 1000 - 1980 | Kr. 3,69 | Kr. 73,80 |
| 2000 + | Kr. 3,421 | Kr. 68,42 |
*price indicative
- RS Stock No.:
- 214-9031
- Mfr. Part No.:
- IPD14N06S280ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability.
It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Related links
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD50N06S2L13ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S223ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S215ATMA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4
