Infineon CoolMOS C6 N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 IPD60R2K0C6ATMA1

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Subtotal (1 reel of 2500 units)*

Kr. 7 722,50

(exc. VAT)

Kr. 9 652,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500Kr. 3,089Kr. 7 722,50
5000 +Kr. 3,012Kr. 7 530,00

*price indicative

RS Stock No.:
214-9042
Mfr. Part No.:
IPD60R2K0C6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

CoolMOS C6

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

22.3W

Forward Voltage Vf

900mV

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22mm

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Easy to use/drive

Fully qualified according to JEDEC for Industrial Applications

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