Infineon CoolMOS C6 Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin TO-252 IPD60R2K0C6ATMA1
- RS Stock No.:
- 214-9043
- Mfr. Part No.:
- IPD60R2K0C6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.192 075
(exc. VAT)
Kr.240 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 20. april 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | Kr. 7,683 | Kr. 192,08 |
| 125 - 225 | Kr. 7,299 | Kr. 182,48 |
| 250 - 600 | Kr. 7,143 | Kr. 178,58 |
| 625 - 1225 | Kr. 6,686 | Kr. 167,15 |
| 1250 + | Kr. 6,223 | Kr. 155,58 |
*price indicative
- RS Stock No.:
- 214-9043
- Mfr. Part No.:
- IPD60R2K0C6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C6 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 22.3W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C6 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 22.3W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Easy to use/drive
Fully qualified according to JEDEC for Industrial Applications
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