Infineon CoolMOS P7 N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-252 IPD80R750P7ATMA1
- RS Stock No.:
- 214-9053
- Mfr. Part No.:
- IPD80R750P7ATMA1
- Brand:
- Infineon
Add 75 more to save Kr. 52,05
View bulk pricing optionsSubtotal (1 pack of 15 units)*
Kr. 210,05
(exc. VAT)
Kr. 262,56
(inc. VAT)
FREE delivery for online orders over 750,00 kr
- 2 415 unit(s) ready to ship
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 15 - 60 | Kr. 14,003 | Kr. 210,05 | - |
| 75 - 135 | Kr. 13,309 | Kr. 199,64 | Kr. 52,05 |
| 150 - 360 | Kr. 13,027 | Kr. 195,41 | Kr. 146,40 |
| 375 - 735 | Kr. 12,18 | Kr. 182,70 | Kr. 683,63 |
| 750 + | Kr. 11,349 | Kr. 170,24 | Kr. 1 990,50 |
*price indicative
- RS Stock No.:
- 214-9053
- Mfr. Part No.:
- IPD80R750P7ATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 51W | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 51W | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Related links
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- Infineon CoolMOS P7 N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R600P7ATMA1
