Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.1 030 875 

(exc. VAT)

Kr.1 288 575 

(inc. VAT)

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  • Shipping from 05. oktober 2026
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Units
Per unit
Per Tube*
75 - 75Kr. 13,745Kr. 1 030,88
150 - 300Kr. 10,996Kr. 824,70
375 - 675Kr. 10,445Kr. 783,38
750 - 1425Kr. 9,896Kr. 742,20
1500 +Kr. 9,485Kr. 711,38

*price indicative

RS Stock No.:
220-7440
Mfr. Part No.:
IPS80R750P7AKMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-251

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

750mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

51W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.22mm

Length

6.7mm

Width

2.35 mm

Automotive Standard

No

The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss

Best-in-class DPAK R DS(on) of 280mΩ

Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3

Enabling higher power density designs, BOM savings and lower assembly cost

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

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