Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

RS Stock No.:: 220-7445
Mfr. Part No.:: IPSA70R2K0P7SAKMA1
Brand:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.88 85

(exc. VAT)

Kr.111 05

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

1 250 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
25 - 225	Kr. 3,554	Kr. 88,85
250 - 600	Kr. 3,372	Kr. 84,30
625 - 1225	Kr. 3,304	Kr. 82,60
1250 - 2475	Kr. 3,089	Kr. 77,23
2500 +	Kr. 2,489	Kr. 62,23

*price indicative

RS Stock No.:: 220-7445
Mfr. Part No.:: IPSA70R2K0P7SAKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS P7
	Package Type	TO-251
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	3.8nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	17.6W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	6.1mm
	Length	6.6mm
	Width	2.38 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS P7
	Package Type TO-251
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 3.8nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 17.6W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 6.1mm
	Length 6.6mm
	Width 2.38 mm
	Automotive Standard No

Datasheet - IPSA70R2K0P7SAKMA1

The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss

Excellent thermal behavior

Integrated ESD protection diode

Low switching losses(Eoss)

Product validationa cc.JEDEC Standard

Cost competitive technology

Lower temperature

High ES Druggedness

Enables efficiency gainsat higher switching frequencies

Enableshighpowerdensitydesignsandsmallformfactors

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

FREE delivery for online orders over 500,00 kr

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