Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.669 525 

(exc. VAT)

Kr.836 925 

(inc. VAT)

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Units
Per unit
Per Tube*
75 +Kr. 8,927Kr. 669,53

*price indicative

RS Stock No.:
214-9109
Mfr. Part No.:
IPS80R900P7AKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Width

2.35 mm

Height

6.22mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.

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