Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-251 IPS80R900P7AKMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

Kr.172 395 

(exc. VAT)

Kr.215 49 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 1 455 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60Kr. 11,493Kr. 172,40
75 - 135Kr. 10,921Kr. 163,82
150 - 360Kr. 10,456Kr. 156,84
375 - 735Kr. 10,006Kr. 150,09
750 +Kr. 9,305Kr. 139,58

*price indicative

Packaging Options:
RS Stock No.:
214-9110
Mfr. Part No.:
IPS80R900P7AKMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-251

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

6.22mm

Width

2.35 mm

Length

6.7mm

Automotive Standard

No

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.

Fully optimized portfolio

Integrated Zener Diode ESD protection

Related links