Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1

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Subtotal (1 pack of 15 units)*

Kr.118 77 

(exc. VAT)

Kr.148 47 

(inc. VAT)

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15 - 60Kr. 7,918Kr. 118,77
75 - 135Kr. 7,512Kr. 112,68
150 - 360Kr. 7,207Kr. 108,11
375 - 735Kr. 6,887Kr. 103,31
750 +Kr. 6,414Kr. 96,21

*price indicative

Packaging Options:
RS Stock No.:
214-9055
Mfr. Part No.:
IPD90N04S403ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

175°C

Height

2.3mm

Standards/Approvals

No

Length

6.5mm

Width

6.22 mm

Automotive Standard

AEC-Q101

The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

It is Automotive AEC Q101 qualified

100% Avalanche tested

It has 175°C operating temperature

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