Infineon CoolMOS CE Type N-Channel MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-251 IPS60R800CEAKMA1

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Subtotal (1 pack of 25 units)*

Kr.214 925 

(exc. VAT)

Kr.268 65 

(inc. VAT)

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  • 1 250 unit(s) ready to ship
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Units
Per unit
Per Pack*
25 - 100Kr. 8,597Kr. 214,93
125 - 225Kr. 6,708Kr. 167,70
250 - 600Kr. 6,278Kr. 156,95
625 - 1225Kr. 5,848Kr. 146,20
1250 +Kr. 5,418Kr. 135,45

*price indicative

Packaging Options:
RS Stock No.:
214-9103
Mfr. Part No.:
IPS60R800CEAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

74W

Typical Gate Charge Qg @ Vgs

17.2nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.4 mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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