Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO BSC094N06LS5ATMA1
- RS Stock No.:
- 215-2465
- Mfr. Part No.:
- BSC094N06LS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.190 26
(exc. VAT)
Kr.237 82
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 9,513 | Kr. 190,26 |
| 100 - 180 | Kr. 9,038 | Kr. 180,76 |
| 200 - 480 | Kr. 8,655 | Kr. 173,10 |
| 500 - 980 | Kr. 8,277 | Kr. 165,54 |
| 1000 + | Kr. 7,711 | Kr. 154,22 |
*price indicative
- RS Stock No.:
- 215-2465
- Mfr. Part No.:
- BSC094N06LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Low R DS(on) in small package
Low gate charge
Lower output charge
Logic level compatibility
Related links
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