Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1

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Subtotal (1 pack of 50 units)*

Kr.67 75 

(exc. VAT)

Kr.84 70 

(inc. VAT)

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Units
Per unit
Per Pack*
50 +Kr. 1,355Kr. 67,75

*price indicative

Packaging Options:
RS Stock No.:
215-2469
Mfr. Part No.:
BSR315PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

620mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SC-59

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.5W

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Pb-free lead-plating

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