Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN BSZ146N10LS5ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

Kr.202 12 

(exc. VAT)

Kr.252 64 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 1 400 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 20Kr. 10,106Kr. 202,12
40 - 80Kr. 9,60Kr. 192,00
100 - 180Kr. 9,186Kr. 183,72
200 - 480Kr. 8,792Kr. 175,84
500 +Kr. 8,186Kr. 163,72

*price indicative

Packaging Options:
RS Stock No.:
215-2473
Mfr. Part No.:
BSZ146N10LS5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

8nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility

Related links