Infineon OptiMOS-T2 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-252 IPD100N06S403ATMA2

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Subtotal (1 pack of 10 units)*

Kr.113 12 

(exc. VAT)

Kr.141 40 

(inc. VAT)

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10 - 40Kr. 11,312Kr. 113,12
50 - 90Kr. 10,746Kr. 107,46
100 - 240Kr. 10,294Kr. 102,94
250 - 490Kr. 9,841Kr. 98,41
500 +Kr. 9,163Kr. 91,63

*price indicative

Packaging Options:
RS Stock No.:
215-2502
Mfr. Part No.:
IPD100N06S403ATMA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

128nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 100V maximum drain source voltage, N-Channel, Automotive MOSFET, with DPAK(TO-252)package.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Ultra Low RDSon

Ultra High ID

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