MPN

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263

RS Stock No.:: 218-3032
Mfr. Part No.:: IPB120N06S4H1ATMA2
Brand:: Infineon

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

Kr.20 361 00

(exc. VAT)

Kr.25 451 00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Reel*
1000 +	Kr. 20,361	Kr. 20 361,00

*price indicative

RS Stock No.:: 218-3032
Mfr. Part No.:: IPB120N06S4H1ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	OptiMOS-T2
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series OptiMOS-T2
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB120N06S4H1ATMA2

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

175°C operating temperature

100% Avalanche tested

Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263

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