Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP120N08S403AKSA1
- RS Stock No.:
- 214-9088
- Mfr. Part No.:
- IPP120N08S403AKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.221 41
(exc. VAT)
Kr.276 76
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 990 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 44,282 | Kr. 221,41 |
| 10 - 20 | Kr. 37,202 | Kr. 186,01 |
| 25 - 45 | Kr. 35,006 | Kr. 175,03 |
| 50 - 120 | Kr. 32,33 | Kr. 161,65 |
| 125 + | Kr. 30,11 | Kr. 150,55 |
*price indicative
- RS Stock No.:
- 214-9088
- Mfr. Part No.:
- IPP120N08S403AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | OptiMOS-T2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series OptiMOS-T2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
Related links
- Infineon OptiMOS™ -T2 N-Channel MOSFET 80 V, 3-Pin TO-220 IPP120N08S403AKSA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 80 V, 3-Pin D2PAK IPB120N08S404ATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 80 V, 3-Pin D2PAK IPB120N08S403ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 80 V, 3-Pin TO-220 IPP023N08N5AKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP020N08N5AKSA1
- Infineon N-Channel MOSFET 80 V PG-TDSON IPP034N08N5AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 100 V, 3-Pin TO-220 IPP030N10N5AKSA1