Infineon OptiMOS-T2 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 IPP80N06S407AKSA2

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Subtotal (1 pack of 10 units)*

Kr.207 38 

(exc. VAT)

Kr.259 22 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 20,738Kr. 207,38
50 - 90Kr. 19,723Kr. 197,23
100 - 240Kr. 17,755Kr. 177,55
250 - 490Kr. 15,959Kr. 159,59
500 +Kr. 15,192Kr. 151,92

*price indicative

Packaging Options:
RS Stock No.:
215-2548
Mfr. Part No.:
IPP80N06S407AKSA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

56nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS® -T2 Power-Transistor series has 60V maximum drain source voltage with TO-220 package type. It is N-Channel with 7.1 mΩ max maximum drain source resistance.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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