Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.1 482 60 

(exc. VAT)

Kr.1 853 25 

(inc. VAT)

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  • 950 unit(s) ready to ship
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Per Tube*
50 +Kr. 29,652Kr. 1 482,60

*price indicative

RS Stock No.:
214-9087
Mfr. Part No.:
IPP120N08S403AKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS-T2

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

128nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.57 mm

Standards/Approvals

No

Length

10.36mm

Height

9.45mm

Automotive Standard

AEC-Q101

The Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

The product is AEC Q101 qualified

It has 175°C operating temperature

100% Avalanche tested

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