Infineon OptiMOS 2 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 3-Pin TO-252

View all MOSFETs

Subtotal (1 reel of 2500 units)*

Kr.10 675 00 

(exc. VAT)

Kr.13 350 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 10 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +Kr. 4,27Kr. 10 675,00

*price indicative

RS Stock No.:
215-2505
Mfr. Part No.:
IPD33CN10NGATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

OptiMOS 2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

33mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

58W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).

N-channel, normal level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free lead plating

Qualified according to JEDEC for target application

Ideal for high-frequency switching and synchronous rectification

Related links