Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.8 200 00 

(exc. VAT)

Kr.10 250 00 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500Kr. 3,28Kr. 8 200,00
5000 +Kr. 3,116Kr. 7 790,00

*price indicative

RS Stock No.:
215-2512
Mfr. Part No.:
IPD80R2K0P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

800V

Series

800V CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

24W

Typical Gate Charge Qg @ Vgs

9nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

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