Infineon CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 IPP60R360P7XKSA1

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Subtotal (1 pack of 10 units)*

Kr.115 95 

(exc. VAT)

Kr.144 94 

(inc. VAT)

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10 +Kr. 11,595Kr. 115,95

*price indicative

Packaging Options:
RS Stock No.:
215-2544
Mfr. Part No.:
IPP60R360P7XKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

41W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

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