Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 215-2545
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.750 60
(exc. VAT)
Kr.938 25
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 04. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 15,012 | Kr. 750,60 |
| 100 - 200 | Kr. 12,01 | Kr. 600,50 |
| 250 - 450 | Kr. 11,408 | Kr. 570,40 |
| 500 - 950 | Kr. 10,809 | Kr. 540,45 |
| 1000 + | Kr. 10,358 | Kr. 517,90 |
*price indicative
- RS Stock No.:
- 215-2545
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Related links
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R600P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPAW60R600P7SXKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 600 V, 3-Pin TO-220 FP IPA60R600P7SXKSA1
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V, 3-Pin TO-220 STP6NK60Z
- STMicroelectronics MDmesh 6 A 3-Pin TO-220 STP6NK60Z
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R900P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R900P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 700 V, 3-Pin TO-220 FP IPAN70R900P7SXKSA1