Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

Kr.10 662 00 

(exc. VAT)

Kr.13 326 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 3,554Kr. 10 662,00

*price indicative

RS Stock No.:
215-2600
Mfr. Part No.:
IRFR5410TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

66W

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

58nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated

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