Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 48 A, 40 V Enhancement, 8-Pin PDFN56 TSM110NB04DCR
- RS Stock No.:
- 216-9683
- Mfr. Part No.:
- TSM110NB04DCR
- Brand:
- Taiwan Semiconductor
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.553 475
(exc. VAT)
Kr.691 85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 4 950 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | Kr. 22,139 | Kr. 553,48 |
| 50 - 75 | Kr. 21,718 | Kr. 542,95 |
| 100 - 225 | Kr. 19,924 | Kr. 498,10 |
| 250 - 975 | Kr. 19,549 | Kr. 488,73 |
| 1000 + | Kr. 18,13 | Kr. 453,25 |
*price indicative
- RS Stock No.:
- 216-9683
- Mfr. Part No.:
- TSM110NB04DCR
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Width | 5.2 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Width 5.2 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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