Infineon CoolMOS P7 N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
- RS Stock No.:
- 217-2558
- Mfr. Part No.:
- IPP60R080P7XKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in tubes of 50)*
Kr. 1 518,45
(exc. VAT)
Kr. 1 898,05
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 30,369 | Kr. 1 518,45 |
| 100 - 200 | Kr. 27,332 | Kr. 1 366,60 |
| 250 + | Kr. 25,813 | Kr. 1 290,65 |
*price indicative
- RS Stock No.:
- 217-2558
- Mfr. Part No.:
- IPP60R080P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 129W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.95mm | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 129W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 29.95mm | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IPP60R080P7XKSA1
This MOSFET is a high-voltage, N-channel switching transistor designed for power applications requiring through-hole mounting and enhanced-channel operation. It is intended for circuits that need substantial continuous drain current and elevated voltage handling across a wide operating temperature range.
Features and Benefits:
• 600V drain capability enables high-voltage switching applications
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
• 37A continuous drain current supports high-power load handling
• 80mΩ Rds(on) reduces conduction losses for improved efficiency
• 129W maximum power dissipation allows sustained power handling
• 51nC typical gate charge supports predictable switching behaviour
• 20V gate rating tolerates robust gate-drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
• Ideal for motor-drive stages requiring high current
• Used with through-hole PCBs in industrial control systems
• Can be used for switch-mode power conversion designs
• Suitable for needing wide temperature endurance
What thermal extremes can this device operate within?
It is rated to operate from -55°C up to 150°C.
What package and mounting method does it use?
The device is supplied in a TO-220 package for through-hole mounting.
What is the device channel type and operating mode?
It uses an N-type channel in enhancement mode for conventional high-side or low-side switching.
What is the device forward voltage and how does it affect circuits?
The forward voltage is 0.9V, which affects the conduction drop during forward conduction in circuit designs.
Related links
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R600P7XKSA1