Infineon CoolMOS CE N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin IPAK IPU60R1K5CEAKMA2
- RS Stock No.:
- 217-2585
- Mfr. Part No.:
- IPU60R1K5CEAKMA2
- Brand:
- Infineon
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Add 100 more to save Kr. 97,70
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Kr. 212,10
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Kr. 265,10
(inc. VAT)
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In Stock
- 600 unit(s) ready to ship
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 50 - 50 | Kr. 4,242 | Kr. 212,10 | - |
| 100 - 200 | Kr. 3,265 | Kr. 163,25 | Kr. 97,70 |
| 250 - 450 | Kr. 3,057 | Kr. 152,85 | Kr. 296,25 |
| 500 - 1200 | Kr. 2,842 | Kr. 142,10 | Kr. 700,00 |
| 1250 + | Kr. 2,631 | Kr. 131,55 | Kr. 2 013,75 |
*price indicative
- RS Stock No.:
- 217-2585
- Mfr. Part No.:
- IPU60R1K5CEAKMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 49W | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 49W | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
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