Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V TO-263 IRFS3207ZTRRPBF

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Subtotal (1 pack of 5 units)*

Kr.191 36 

(exc. VAT)

Kr.239 20 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 38,272Kr. 191,36
25 - 45Kr. 32,146Kr. 160,73
50 - 120Kr. 30,224Kr. 151,12
125 - 245Kr. 28,326Kr. 141,63
250 +Kr. 26,014Kr. 130,07

*price indicative

Packaging Options:
RS Stock No.:
217-2632
Mfr. Part No.:
IRFS3207ZTRRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.1mΩ

Typical Gate Charge Qg @ Vgs

170nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.

Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

RoHS Compliant, Halogen-Free

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