Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.16 288 80 

(exc. VAT)

Kr.20 360 80 

(inc. VAT)

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Per Reel*
800 +Kr. 20,361Kr. 16 288,80

*price indicative

RS Stock No.:
214-4445
Mfr. Part No.:
IRF2907ZSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

270nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.

It is Lead-free

It is capable of being wave soldered

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