Infineon HEXFET Type N-Channel MOSFET, 140 A, 30 V TO-263

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Subtotal (1 reel of 800 units)*

Kr.9 688 00 

(exc. VAT)

Kr.12 112 00 

(inc. VAT)

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  • Shipping from 22. november 2027
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Units
Per unit
Per Reel*
800 - 800Kr. 12,11Kr. 9 688,00
1600 +Kr. 11,505Kr. 9 204,00

*price indicative

RS Stock No.:
217-2637
Mfr. Part No.:
IRL3803STRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

140A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

9mΩ

Typical Gate Charge Qg @ Vgs

140nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

15.88mm

Width

4.83 mm

Length

10.67mm

Automotive Standard

No

The Infineon 30V Single N-Channel IR MOSFET in a D2-Pak package.

Planar cell structure for wide Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

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