Infineon HEXFET Type N-Channel MOSFET, 93 A, 20 V, 3-Pin TO-252 IRFR3711ZTRPBF
- RS Stock No.:
- 218-3109
- Mfr. Part No.:
- IRFR3711ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr. 193,12
(exc. VAT)
Kr. 241,40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 9,656 | Kr. 193,12 |
| 100 - 180 | Kr. 9,175 | Kr. 183,50 |
| 200 - 480 | Kr. 8,792 | Kr. 175,84 |
| 500 - 980 | Kr. 8,403 | Kr. 168,06 |
| 1000 + | Kr. 7,819 | Kr. 156,38 |
*price indicative
- RS Stock No.:
- 218-3109
- Mfr. Part No.:
- IRFR3711ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 10V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 10V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series 20V Single N-Channel Power MOSFET. This device is ideal for low frequency applications requiring performance and ruggedness.
Ultra-Low Gate Impedance
Lead free
Related links
- Infineon HEXFET Type N-Channel MOSFET 20 V, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247 IRFP4768PBF
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 20 V TO-252 IRLR6225TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
- Infineon HEXFET Type N-Channel MOSFET -20 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN