Infineon CoolMOS P7 SJ Type N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1

RS Stock No.:: 219-6015
Mfr. Part No.:: IPU95R3K7P7AKMA1
Brand:: Infineon

Infineon CoolMOS P7 SJ Type N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1

Bulk discount available

Subtotal (1 pack of 15 units)*

Kr.106 635

(exc. VAT)

Kr.133 29

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 1 335 unit(s) shipping from 26. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
15 - 60	Kr. 7,109	Kr. 106,64
75 - 135	Kr. 6,749	Kr. 101,24
150 - 360	Kr. 6,46	Kr. 96,90
375 - 735	Kr. 6,185	Kr. 92,78
750 +	Kr. 5,758	Kr. 86,37

*price indicative

RS Stock No.:: 219-6015
Mfr. Part No.:: IPU95R3K7P7AKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-251
	Series	CoolMOS P7 SJ
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	370mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	22W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-251
	Series CoolMOS P7 SJ
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 370mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 22W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard No

Datasheet - IPU95R3K7P7AKMA1

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon CoolMOS P7 SJ Type N-Channel MOSFET, 2 A, 950 V Enhancement, 3-Pin TO-251 IPU95R3K7P7AKMA1

FREE delivery for online orders over 500,00 kr

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