Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON

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Subtotal (1 reel of 5000 units)*

Kr.86 255 00 

(exc. VAT)

Kr.107 820 00 

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +Kr. 17,251Kr. 86 255,00

*price indicative

RS Stock No.:
220-7356
Mfr. Part No.:
BSC13DN30NSFDATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

300V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.1 mm

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Improved hard commutation ruggedness

Optimized hard switching behaviour

Industry’s lowest R ds(on), Q g and Q rr

RoHS compliant - halogen free

Highest system reliability

System cost reduction

Highest efficiency and power density

Easy-to-design products

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