Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON BSC13DN30NSFDATMA1

Subtotal (1 pack of 5 units)*

Kr.69 76 

(exc. VAT)

Kr.87 20 

(inc. VAT)

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5 +Kr. 13,952Kr. 69,76

*price indicative

Packaging Options:
RS Stock No.:
220-7357
Mfr. Part No.:
BSC13DN30NSFDATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

300V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

1.2mm

Width

6.1 mm

Length

5.35mm

Automotive Standard

No

The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Improved hard commutation ruggedness

Optimized hard switching behaviour

Industry’s lowest R ds(on), Q g and Q rr

RoHS compliant - halogen free

Highest system reliability

System cost reduction

Highest efficiency and power density

Easy-to-design products

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