Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- RS Stock No.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.156 36
(exc. VAT)
Kr.195 44
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 360 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | Kr. 7,818 | Kr. 156,36 |
| 100 - 180 | Kr. 7,431 | Kr. 148,62 |
| 200 - 480 | Kr. 7,11 | Kr. 142,20 |
| 500 - 980 | Kr. 6,801 | Kr. 136,02 |
| 1000 + | Kr. 6,332 | Kr. 126,64 |
*price indicative
- RS Stock No.:
- 220-7362
- Mfr. Part No.:
- BSZ100N06NSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Related links
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 60 V, 8-Pin PQFN 3 x 3 BSZ100N06NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S5L4R8ATMA1
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 30 V, 8-Pin PQFN 3 x 3 IRFH3707TRPBF
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IAUZ40N06S5N050ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 FL BSZ039N06NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 ISZ034N06LM5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IQE030N06NM5CGATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IAUZ30N06S5L140ATMA1