Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 80 A, 100 V Enhancement, 3-Pin TO-263 IPB065N10N3GATMA1

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Subtotal (1 pack of 5 units)*

Kr.157 89 

(exc. VAT)

Kr.197 36 

(inc. VAT)

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  • 865 unit(s) ready to ship
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Units
Per unit
Per Pack*
5 - 5Kr. 31,578Kr. 157,89
10 - 95Kr. 28,898Kr. 144,49
100 - 245Kr. 26,724Kr. 133,62
250 - 495Kr. 24,78Kr. 123,90
500 +Kr. 24,138Kr. 120,69

*price indicative

Packaging Options:
RS Stock No.:
220-7383
Mfr. Part No.:
IPB065N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance

World’s lowest R DS(on)

Very low Q g and Q gd

Excellent gate charge x R DS(on) product (FOM)

Environmentally friendly

Increased efficiency

Highest power density

Less paralleling required

Smallest board-space consumption

Easy-to-design products

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