Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 105 A, 150 V Enhancement, 3-Pin TO-263 IPB083N15N5LFATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.141 87 

(exc. VAT)

Kr.177 338 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18Kr. 70,935Kr. 141,87
20 - 48Kr. 63,15Kr. 126,30
50 - 98Kr. 58,915Kr. 117,83
100 - 198Kr. 55,37Kr. 110,74
200 +Kr. 51,08Kr. 102,16

*price indicative

Packaging Options:
RS Stock No.:
220-7385
Mfr. Part No.:
IPB083N15N5LFATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

OptiMOS 5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time

Related links