Infineon CoolMOS Type N-Channel MOSFET & Diode, 51 A, 650 V Enhancement, 3-Pin TO-252 IPD60R170CFD7ATMA1

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Subtotal (1 pack of 5 units)*

Kr.121 90 

(exc. VAT)

Kr.152 40 

(inc. VAT)

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Per Pack*
5 +Kr. 24,38Kr. 121,90

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Packaging Options:
RS Stock No.:
220-7407
Mfr. Part No.:
IPD60R170CFD7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

76W

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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