Infineon CoolMOS Type N-Channel MOSFET & Diode, 6.8 A, 650 V Enhancement, 3-Pin TO-251

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Subtotal (1 tube of 75 units)*

Kr.218 10 

(exc. VAT)

Kr.272 625 

(inc. VAT)

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Units
Per unit
Per Tube*
75 +Kr. 2,908Kr. 218,10

*price indicative

RS Stock No.:
220-7438
Mfr. Part No.:
IPS60R1K0CEAKMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

6.8A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-251

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

61W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

2.4 mm

Height

6.22mm

Automotive Standard

No

The Infineon Cool MOS CE is suitable for hard and soft switching applications and as modern super junction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V Cool MOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Low conduction losses

Low switching losses

Suitable for hard and soft switching

Easy controllable switching behaviour

Improved efficiency and consequent reduction of power consumption

Less design in effort

Easy to use

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