Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

RS Stock No.:: 220-7453
Mfr. Part No.:: IPW60R090CFD7XKSA1
Brand:: Infineon

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

Bulk discount available

Subtotal (1 tube of 30 units)*

Kr.1 318 77

(exc. VAT)

Kr.1 648 47

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

90 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
30 - 30	Kr. 43,959	Kr. 1 318,77
60 - 120	Kr. 41,761	Kr. 1 252,83
150 +	Kr. 40,003	Kr. 1 200,09

*price indicative

RS Stock No.:: 220-7453
Mfr. Part No.:: IPW60R090CFD7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	97A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolMOS
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	5.21 mm
	Length	16.13mm
	Height	21.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 97A
	Maximum Drain Source Voltage Vds 650V
	Series CoolMOS
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 5.21 mm
	Length 16.13mm
	Height 21.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R090CFD7XKSA1

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 3-Pin TO-247

FREE delivery for online orders over 500,00 kr

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