Infineon CoolMOS N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1
- RS Stock No.:
- 220-7462
- Mfr. Part No.:
- IPW65R110CFDAFKSA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 164,96
(exc. VAT)
Kr. 206,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 136 unit(s) shipping from 07 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 82,48 | Kr. 164,96 |
| 10 - 18 | Kr. 74,245 | Kr. 148,49 |
| 20 - 48 | Kr. 69,325 | Kr. 138,65 |
| 50 - 98 | Kr. 65,15 | Kr. 130,30 |
| 100 + | Kr. 60,175 | Kr. 120,35 |
*price indicative
- RS Stock No.:
- 220-7462
- Mfr. Part No.:
- IPW65R110CFDAFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 99.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 277.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 99.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 277.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.
First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & low Q oss
Reduced turn on and turn of delay times
Increased safety margin due to higher breakdown voltage
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
Higher switching frequency and/or higher duty cycle possible
High quality and reliability
Related links
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- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R095CFD7AUMA1