Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.15 517 50 

(exc. VAT)

Kr.19 397 50 

(inc. VAT)

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  • 2 500 unit(s) shipping from 19. februar 2026
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Units
Per unit
Per Reel*
2500 +Kr. 6,207Kr. 15 517,50

*price indicative

RS Stock No.:
220-7410
Mfr. Part No.:
IPD70P04P4L08ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.3V

Maximum Power Dissipation Pd

75W

Maximum Gate Source Voltage Vgs

5 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Maximum Operating Temperature

175°C

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

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