Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.18 438 40 

(exc. VAT)

Kr.23 048 00 

(inc. VAT)

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Per Reel*
800 +Kr. 23,048Kr. 18 438,40

*price indicative

RS Stock No.:
220-7471
Mfr. Part No.:
IRF60SC241ARMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

363A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

StrongIRFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

311nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.4W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.2mm

Standards/Approvals

No

Width

9.45 mm

Height

4.4mm

Automotive Standard

No

The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Low RDS(on)

High current capability

Industry standard package

Flexible pinout

Optimized for 10 V gate drive

Reduction in conduction losses

Increased power density

Drop in replacement to existing devices

Offers design flexibility

Provides immunity to false turn-on in noisy environments

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