Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

RS Stock No.:: 220-7490
Mfr. Part No.:: IRFR1010ZTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.136 21

(exc. VAT)

Kr.170 26

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 2 570 unit(s) shipping from 26. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	Kr. 13,621	Kr. 136,21
100 - 240	Kr. 12,939	Kr. 129,39
250 - 490	Kr. 12,39	Kr. 123,90
500 - 990	Kr. 11,852	Kr. 118,52
1000 +	Kr. 11,028	Kr. 110,28

*price indicative

RS Stock No.:: 220-7490
Mfr. Part No.:: IRFR1010ZTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	42A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	366W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	460nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	20.7mm
	Standards/Approvals	No
	Length	15.87mm
	Width	5.31 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 42A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 366W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 460nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 20.7mm
	Standards/Approvals No
	Length 15.87mm
	Width 5.31 mm
	Automotive Standard No

Datasheet - IRFR1010ZTRPBF

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level : Optimized for 10 V gate drive voltage

Industry standard surface-mount power package

Capable of being wave-soldered

Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252 IRFR1010ZTRPBF

FREE delivery for online orders over 500,00 kr

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