Infineon HEXFET Type N-Channel MOSFET, 42 A, 55 V Enhancement, 3-Pin TO-252 IRLR2905TRPBF
- RS Stock No.:
- 830-3357
- Distrelec Article No.:
- 304-44-477
- Mfr. Part No.:
- IRLR2905TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.231 10
(exc. VAT)
Kr.288 88
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 200 unit(s) shipping from 19. januar 2026
- Plus 420 unit(s) shipping from 19. januar 2026
- Plus 1 500 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | Kr. 11,555 | Kr. 231,10 |
| 40 - 80 | Kr. 9,015 | Kr. 180,30 |
| 100 - 180 | Kr. 8,437 | Kr. 168,74 |
| 200 - 480 | Kr. 7,86 | Kr. 157,20 |
| 500 + | Kr. 7,282 | Kr. 145,64 |
*price indicative
- RS Stock No.:
- 830-3357
- Distrelec Article No.:
- 304-44-477
- Mfr. Part No.:
- IRLR2905TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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