Infineon HEXFET Type N-Channel MOSFET, 42 A, 40 V Enhancement, 3-Pin TO-252 IRFR4104TRLPBF

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Kr.156 95 

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Kr.196 19 

(inc. VAT)

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Per Pack*
10 - 40Kr. 15,695Kr. 156,95
50 - 90Kr. 14,918Kr. 149,18
100 - 240Kr. 14,277Kr. 142,77
250 - 490Kr. 13,659Kr. 136,59
500 +Kr. 12,71Kr. 127,10

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Packaging Options:
RS Stock No.:
214-9129
Mfr. Part No.:
IRFR4104TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

175°C

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

It comes with Advanced Process Technology

The MOSFET is Lead-Free

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